PART |
Description |
Maker |
UPB100474ABH-6 UPB100474AD-5 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns. 1,024 x 4-bit 100K ECL RAM. Access time(max) 5 ns.
|
NEC
|
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http:// SIEMENS A G SIEMENS AG
|
V850E1 V850E_SV2 V850E_IA1 V850E_IA2 V850E_IA3 V85 |
V850E/IA2 Flash product ROM: 128 KB, RAM: 6 KB V850E/IA2 Mask product ROM: 128 KB, RAM: 6 KB V850E/IA3 Flash product ROM: 256 KB, RAM: 12 KB ROM-less version; Internal RAM: 4K bytes 32-bit RISC single-chip microcontroller V850E/SV2 V850E/IA4 Flash memory product ROM: 256 KB, RAM: 12 KB 32-Bit Microprocessor Core
|
NEC[NEC]
|
MC100EP016 MC100EP445FAR2 MC10H424FN MC100EP016A M |
3.3V / 5V ECL 8-Bit Synchronous Binary Up Counter 3.3V / 5VECL 8-Bit Serial/Parallel Converter Quad TTL-ECL Translator 5V ECL 6-Bit 2:1 Mux Latch 4-Wide OR-AND/OR-ANDbar Gate Quad 2-Input AND Gate 3.3V / 5V ECL ÷2 Divider 3.3V / 5V ECL Quad 2-Input Differential AND/NAND 5V ECL Quad 4-Input OR/NOR Gate
|
ON Semiconductor
|
HYB514256BJL-70 HYB514256BJL-60 HYB514256BJL-50 HY |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
MC100H646 MC100EP445FA MC100E156FNR2 MC100EPT22D M |
PECL/TTL-TTL 1:8 Distribution Chip 3.3V / 5VECL 8-Bit Serial/Parallel Converter 5V ECL 3-Bit 4:1 Mux-Latch 3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator 3.3V / 5V ECL 6-Bit Differential Register with Master Reset 3.3V / 5V 2-Input Differential AND/NAND 3.3V / 5V ECL ÷2 Divider 5V ECL Divide by 2, Divide by 4/6 Clock Generation Chip 5V ECL Low Impedance Driver
|
ON Semiconductor
|
CAT5261WI-00-T1 CAT5261WI-50-T1 CAT5261YI-00-T2 |
DPP, NV, Dual 256 taps, SPI DUAL 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
|
Rectron Semiconductor
|
M38259EFDFP M38258E4-FP M38258E4-FS M38258E4-GP M3 |
3825 Series Microcontrollers: On-Chip Segment LCDDrivers with A-D Converter RAM size: 1536 bytes; single-chip 8-bit CMOS microcomputer RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer RAM size: 2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
MAX5479ETET |
Dual, 256-Tap, Nonvolatile, I<sup>2</sup>C-Interface, Digital Potentiometers 100K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, QCC16
|
Maxim Integrated Products, Inc.
|
TC5501 TC5501D-1 |
256 Word x 4-Bit CMOS RAM
|
Toshiba
|