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UPB100422D-10 - 256 x 4-bit 100K ECL RAM. Access time(max) 10 ns.

UPB100422D-10_8435007.PDF Datasheet


 Full text search : 256 x 4-bit 100K ECL RAM. Access time(max) 10 ns.


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UPB100474ABH-6 UPB100474AD-5 1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 5 ns.
NEC
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
http://
SIEMENS A G
SIEMENS AG
V850E1 V850E_SV2 V850E_IA1 V850E_IA2 V850E_IA3 V85 V850E/IA2 Flash product ROM: 128 KB, RAM: 6 KB
V850E/IA2 Mask product ROM: 128 KB, RAM: 6 KB
V850E/IA3 Flash product ROM: 256 KB, RAM: 12 KB
ROM-less version; Internal RAM: 4K bytes
32-bit RISC single-chip microcontroller V850E/SV2
V850E/IA4 Flash memory product ROM: 256 KB, RAM: 12 KB
32-Bit Microprocessor Core
NEC[NEC]
MC100EP016 MC100EP445FAR2 MC10H424FN MC100EP016A M 3.3V / 5V ECL 8-Bit Synchronous Binary Up Counter
3.3V / 5VECL 8-Bit Serial/Parallel Converter
Quad TTL-ECL Translator
5V ECL 6-Bit 2:1 Mux Latch
4-Wide OR-AND/OR-ANDbar Gate
Quad 2-Input AND Gate
3.3V / 5V ECL ÷2 Divider
3.3V / 5V ECL Quad 2-Input Differential AND/NAND
5V ECL Quad 4-Input OR/NOR Gate
ON Semiconductor
HYB514256BJL-70 HYB514256BJL-60 HYB514256BJL-50 HY 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
SIEMENS[Siemens Semiconductor Group]
Infineon
MC100H646 MC100EP445FA MC100E156FNR2 MC100EPT22D M PECL/TTL-TTL 1:8 Distribution Chip
3.3V / 5VECL 8-Bit Serial/Parallel Converter
5V ECL 3-Bit 4:1 Mux-Latch
3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator
3.3V / 5V ECL 6-Bit Differential Register with Master Reset
3.3V / 5V 2-Input Differential AND/NAND
3.3V / 5V ECL ÷2 Divider
5V ECL Divide by 2, Divide by 4/6 Clock Generation Chip
5V ECL Low Impedance Driver
ON Semiconductor
CAT5261WI-00-T1 CAT5261WI-50-T1 CAT5261YI-00-T2 DPP, NV, Dual 256 taps, SPI DUAL 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
Rectron Semiconductor
M38259EFDFP M38258E4-FP M38258E4-FS M38258E4-GP M3 3825 Series Microcontrollers: On-Chip Segment LCDDrivers with A-D Converter
RAM size: 1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 2048 bytes; single-chip 8-bit CMOS microcomputer
Mitsubishi Electric Corporation
MAX5479ETET Dual, 256-Tap, Nonvolatile, I<sup>2</sup>C-Interface, Digital Potentiometers 100K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, QCC16
Maxim Integrated Products, Inc.
TC5501 TC5501D-1 256 Word x 4-Bit CMOS RAM
Toshiba
 
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UPB100422D-10 port UPB100422D-10 taping code UPB100422D-10 sensor UPB100422D-10 surface UPB100422D-10 MUX HCSL
 

 

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